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FSGYE230R
TM
Data Sheet
May 2000
File Number
4853.1
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.
TM
Features
* 12A, 200V, rDS(ON) = 0.150 * UIS Rated * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS * Photo Current - 3.0nA Per-RAD (Si)/s Typically * Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2
The Intersil family of Star*Power FETs includes a series of devices in various voltage, current and package styles. The portfolio consists of Star*Power and Star*Power Gold products. Star*Power FETs are optimized for total dose and rDS(ON) while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge combining SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. Reliability screening is available as either TXV, or Space equivalent of MIL-S-19500. Formerly available as type TA45230W.
Symbol
D
G
S
Packaging
SMD.5
Ordering Information
RAD LEVEL 10K 100K 100K SCREENING LEVEL Engineering Samples TXV Space PART NUMBER/BRAND FSGYE230D1 FSGYE230R3 FSGYE230R4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Star*PowerTM is a trademark of Intersil Corporation. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright (c) Intersil Corporation 2000
FSGYE230R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified FSGYE230R 200 200 12 7 40 30 42 17 0.33 36 12 40 -55 to 150 300 1.0 (Typ) UNITS V V A A A V W W W/ oC A A A oC oC g
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical)
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 200 2.0 1.0 VGS = 0V to 12V VDD = 100V, ID = 12A VGS = 0V to 20V VGS = 0V to 2V ID = 12A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz TYP 0.120 26 10 8 40 3 7 1300 230 8 MAX 5.5 4.5 25 250 100 200 1.86 0.150 0.285 20 25 30 15 28 12 10 3.0 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) tf Qg(12) Qgs Qgd Qg(20) Qg(TH) V(PLATEAU) CISS COSS CRSS RJC
VDS = 160V, VGS = 0V VGS = 30V VGS = 12V, ID = 12A ID = 7A, VGS = 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source On Resistance
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge Source Gate Charge Drain Gate Charge at 20V Threshold Gate Charge Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case
VDD = 100V, ID = 12A, RL = 8.3, VGS = 12V, RGS = 7.5
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FSGYE230R
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL VSD trr QRR TC = 25oC, Unless Otherwise Specified SYMBOL (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = 30V, VDS = 0V VGS = 0, VDS = 160V VGS = 12V, ID = 12A VGS = 12V, ID = 7A MIN 200 2.0 MAX 4.5 100 25 1.86 0.150 UNITS V V nA A V ISD = 12A ISD = 12A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 1.4 MAX 1.2 210 UNITS V ns C
Electrical Specifications up to 100K RAD
PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300s Max. 2. Absolute value.
3. In situ Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area SYMBOL SEESOA ION SPECIES Br I Au Au NOTES: 4. Testing conducted at Brookhaven National Labs. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 37 60 82 82 TYPICAL RANGE () 36 32 28 28 APPLIED VGS BIAS (V) -20 -10 -5 -10 (NOTE 6) MAXIMUM VDS BIAS (V) 200 200 160 120
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36 LET = 60MeV/mg/cm2, RANGE = 32 LET = 82MeV/mg/cm2, RANGE = 28 FLUENCE = 1E5 IONS/cm2 (TYPICAL) 200 160 VDS (V) VDS (V) 120 80 40 TEMP = 25oC 0 0 -5 -10 VGS (V) -15 -20 -25
240 LET = 37 BROMINE 200 160 120 80 40 0 0 -5 -10 -15 -20 VGS (V) -25 -30 -35 -40 LET = 82 GOLD
LET = 60 IODINE
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
3
FSGYE230R Performance Curves
1E-3 LIMITING INDUCTANCE (HENRY)
Unless Otherwise Specified
(Continued)
14 12
1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 ID , DRAIN (A) 10 8 6 4 2 1E-7 10 30 100 DRAIN SUPPLY (V) 300 1000 0 -50
0
50
100
150
TC , CASE TEMPERATURE (oC)
FIGURE 3. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE
100
TC = 25oC
ID , DRAIN CURRENT (A)
10
12V
100s
QG
1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.1 1 10 100
1ms
VG
QGS
QGD
10ms
1000
CHARGE
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5 ID, DRAIN TO SOURCE CURRENT (A) PULSE DURATION = 250ms, VGS = 12V, ID = 7A 2.0 NORMALIZED rDS(ON)
200 DESCENDING ORDER 160 VGS = 14V VGS = 12V VGS = 10V VGS = 8V
1.5
120
1.0
80
0.5
40 VGS = 6V 0 0 2 4 6 8 10
0.0 -80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
4
FSGYE230R Performance Curves
NORMALIZED THERMAL RESPONSE (ZJC) 10
Unless Otherwise Specified
(Continued)
1 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 100 PDM t1 t2 101
0.1
0.001 10-5
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
100 IAS , AVALANCHE CURRENT (A)
STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 0.1 0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L + CURRENT I TRANSFORMER AS BVDSS tP IAS 50 + VDD VDS VDD
-
VARY tP TO OBTAIN REQUIRED PEAK IAS VGS 20V
DUT 50V-150V 50 tAV
0V
tP
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
5
FSGYE230R Test Circuits and Waveforms
(Continued)
VDD RL VDS VGS = 12V DUT 0V RGS VGS 10% 50% PULSE WIDTH 50% 10% 10% VDS tON td(ON) tr 90% tOFF td(OFF) tf 90%
90%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source On Resistance Gate Threshold Voltage NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. SYMBOL IGSS IDSS rDS(ON) VGS(TH) TEST CONDITIONS VGS = 30V VDS = 80% Rated Value TC = 25oC at Rated ID ID = 1.0mA MAX 20 (Note 7) 25 (Note 7) 20% (Note 8) 20% (Note 8) UNITS nA A V
Screening Information
TEST Unclamped Inductive Switching Thermal Response Gate Stress Pind Pre Burn-In Tests (Note 9) Steady State Gate Bias (Gate Stress) Interim Electrical Tests (Note 9) Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. JANTXV EQUIVALENT VGS(PEAK) = 20V, L = 0.1mH; Limit = 36A tH = 10ms; VH = 15V; IH = 1A; LIMIT = 74mV VGS = 45V, t = 250s Optional MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours 10% MIL-S-19500, Group A, Subgroup 2 JANS EQUIVALENT VGS(PEAK) = 20V, L = 0.1mH; Limit = 36A tH = 10ms; VH = 15V; IH = 1A; LIMIT = 74mV VGS = 45V, t = 250s Required MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours 5% MIL-S-19500, Group A, Subgroups 2 and 3
Additional Tests
PARAMETER Safe Operating Area Thermal Impedance SYMBOL SOA VSD TEST CONDITIONS VDS = 160V, t = 10ms tH = 100ms; VH = 25V; IH = 1A MAX 0.45 165 UNITS A mV
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FSGYE230R Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE
A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A E. Group B F. Group C G. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet
Class S - Equivalents
1. RAD HARD "S" EQUIVALENT - STANDARD DATA PACKAGE
A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE
A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Pre and Post Burn-In Read and Record Data D. Group A E. Group B - Attributes Data Sheet - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Pre and Post RAD Read and Record Data
2. RAD HARD MAX. "S" EQUIVALENT - OPTIONAL DATA PACKAGE
A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Subgroups A2, A3, A4, A5 and A7 Data - Attributes Data Sheet - Subgroups B1, B3, B4, B5 and B6 Data - Attributes Data Sheet - Subgroups C1, C2, C3 and C6 Data - Attributes Data Sheet - Pre and Post Radiation Data
F. Group C
G. Group D
7
FSGYE230R SMD2
3 PAD CERAMIC LEADLESS CHIP CARRIER
E
INCHES SYMBOL A b D MIN 0.130 0.135 0.520 0.435 0.115 0.685 0.470 0.152 MAX 0.142 0.145 0.530 0.445 0.125 0.695 0.480 0.162
MILLIMETERS MIN 3.30 3.43 13.20 11.05 2.92 17.40 11.94 3.86 MAX 3.60 3.68 13.46 11.30 3.17 17.65 12.19 4.11 NOTES 3 -
D
D1 D2 E E1 E2 NOTES:
A
E1
E2
1. 2. 3. 4.
No current JEDEC outline for this package. Controlling dimension: INCH. Measurement prior to pre-solder coating the mounting pads. Revision 3 dated 5-00.
2 3 D2
D1
1
b
1 - GATE 2 - SOURCE 3 - DRAIN
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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